Novel fabrication of fixed suspended silicon nitride structure for MEMS devices with dry etching

Abstract

A method of fabricating suspended LPCVD and PECVD silicon nitride structure is demonstrated for a wide range of MEMS (Micro-Electro-Mechanical Systems) applications. Low stress LPCVD and PECVD silicon nitride film of 1 μm thickness were selected for the structure separately. Optical Lithographic parameters, viz, photoresist (PR) thickness, PR variety and baking parameters were optimized to obtain the PR suitable for selective etching of silicon and silicon nitride. Parameters of the dry etching process were also optimized to achieve anisotropic etching of silicon nitride and isotropic etching of Si to release the silicon nitride beam. The silicon nitride structures, thus released, were characterized using Scanning Electron Microscope (SEM) and Laser Doppler Vibrometer (LDV). Finite Element Method (FEM) analysis was carried out using COMSOL, to compare with the experimental modes of vibration investigated using the Laser Doppler Vibrometer (LDV). Thus we demonstrate that the first mode at 30 kHz was indeed the optimum match.