Unconventional quantum Hall effect in Floquet topological insulators

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Abstract

We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h.

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Tahir, M., Vasilopoulos, P., & Schwingenschlögl, U. (2016). Unconventional quantum Hall effect in Floquet topological insulators. Journal of Physics Condensed Matter, 28(38). https://doi.org/10.1088/0953-8984/28/38/385302

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