Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Abstract

Silicon carbide, a third-generation semiconductor material, is widely used in the creation of high-power devices. In this article, we systematically study the influence of three crucial parameters on the polishing rate of a silicon carbide surface using orthogonal experiments. By optimizing the parameters of chemical mechanical polishing (CMP) through experiments, we determined that the material removal rate (MRR) is 1.2 μm/h and the surface roughness (Ra) is 0.093 nm. Analysis of the relevant polishing mechanism revealed that manganese dioxide formed during the polishing process. Finally, due to the electrostatic effect of the two, (Formula presented.) adsorbed on the (Formula presented.), which explains the polishing mechanism of (Formula presented.) in the slurry.