Planar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films

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Abstract

We have measured the in-plane anisotropic magnetoresistance of 100 nm thick Cr O2 thin films at liquid He temperatures. In low magnetic fields H, both the longitudinal and the transverse (planar Hall) resistance show abrupt switches, which characteristically depend on the orientation of H. All the experimental findings consistently demonstrate that the magnetic anisotropy in these Cr O2 thin films is biaxial. We show that the biaxial magnetic anisotropy is due to epitaxial coherency strain, and that it naturally explains the complex magnetic switching behavior reported recently in Cr O2 films with thicknesses of 50 nm≤d≤250 nm. © 2007 American Institute of Physics.

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Goennenwein, S. T. B., Keizer, R. S., Schink, S. W., Van Dijk, I., Klapwijk, T. M., Miao, G. X., … Gupta, A. (2007). Planar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2715442

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