Electric field dependence of the electron mobility in bulk wurtzite ZnO

Abstract

The electric field dependence of the electron mobility in bulk wurtzite zinc oxide (ZnO) material is studied. The low-field electron mobility is calculated as a function of doping concentration and lattice temperature. The results show that above nearly 50 K the electrical conduction is governed by activation through the bulk material and the conduction is then influenced by both lattice and impurity scattering mechanisms. The high-field characteristics are also considered. The transition between the low-field and high-field regions is specified. The negative differential mobility for bulk ZnO at room temperature is observed at electric fields above 280 kV/cm.