Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

Abstract

Fabrication of p-BaSi2(20nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si) and varying air exposure durations (tair) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of tair (varying from 12-150 h) for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0) and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.