Preparation and rectification function of multilayer oxide p-i-n junction

Abstract

The all perovskite oxide p-i-n junctions formed by integrating semiconducting p-type (hole-doped) manganite (La,Sr)MnO3 (LSMO) and metallic n-type (electron-doped) cuprate superconductor (La,Ce)2CuO4, in between, the ferroelectric (Ba,Sr)TiO3 (BST) (which is in n-type semiconducting [1]) is sandwiched as the depletion barrier layer (i). It is shown that the perfect interfaces of the integrated layers is the most important factor to determine the rectification function of such p-i-n junction. For the typical p-i-n junction with depletion layer BST∼20 nm, under the bias case, the forward current density is in 10-1A cm-2 order. The built-in field is estimated to be ∼1.7 V, the depolarization field is ∼1.4 V, and the reverse broken field is ∼-3.3 V. © Published under licence by IOP Publishing Ltd.