Growth, HRXRD, Microhardness and Dielectric Studies on the NLO Material L-Alaninium Maleate

Abstract

The single crystals of the NLO material, L-Alaninium maleate were grown by using the submerged seed solution method. The identity of the crystal was confirmed by single crystal X-ray diffraction. The crystalline perfection was analyzed using high resolution X-ray diffraction and it was found that the crystalline perfection is quite good. The values of the laser damage threshold and the Vicker's microhardness are in the higher range. The dielectric studies at different temperatures showed that the dielectric constant and dielectric loss have low values at higher frequencies and these values are independent of the temperature. The details are presented and discussed.