Impact of transverse and vertical gate electric field on vibrational and electronic properties of MoS2

Abstract

Selectivity of the electric field direction plays a vital role in modulating the phonon characteristics as well as electrical properties in low-dimensional materials. A comprehensive study on the effects of the direction-dependent electric field on MoS2 sample is reported herewith. The field-induced changes in the phonon characteristics and electronic band structure have been systematically investigated based on field responsive Raman and photoluminescence measurements. The atomistic insights obtained from density functional theory calculations have been correlated with the experimental observations to elucidate the underlying mechanism. The applied transverse electric field is found to be significantly more efficacious than the electric field applied vertically in altering the phonon signatures and bandgap in MoS2, where the electrostrictive response is found to arise from the field-induced alteration in metal-chalcogen interatomic bonds.