Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films

Abstract

Carbon is a typical impurity in thin films fabricated by metal-organic chemical-vapor deposition (MOCVD). The role of carbon in undoped and nitrogen-doped ZnO thin films was studied experimentally and theoretically to understand the possible compensation effects. ZnO thin films are fabricated by low-pressure MOCVD using diethylzinc, nitric oxide (for nitrogen-doped films), or oxygen precursors (for undoped films). Compared with sputtering-fabricated ZnO film, the carbon concentration in the MOCVD-fabricated ZnO film is very high. Furthermore, the MOCVD-fabricated ZnO:N film has an even higher carbon concentration than the undoped ZnO. Considering the signal observed previously by Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy, it is possible that the incorporated carbon has formed complexes with doped nitrogen. The first-principles calculations predict that the formation energy for carbon interstitial (Ci) is relatively high. However, due to the large binding energy between Ci and NO (nitrogen substitute on oxygen site), the formation energy of the carbon-nitrogen (CN) defect complex is lower than that of the Ci. As a result, with nitrogen doping, the carbon-impurity concentration would be high. In the insulator or p-type ZnO films, the CN defect complexes have 1+ charge state. Therefore, the existence of carbon in the ZnO:N film could be another possible passivation factor to the nitrogen acceptor, in addition to hydrogen.