High-quality all-oxide Schottky junctions fabricated on heavily doped Nb: SrTi O3 substrates

Abstract

We present a detailed investigation of the electrical properties of epitaxial La0.7 Sr0.3 Mn O3/Sr Ti0.98 Nb0.02 O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 1020 cm-3. Moreover, the junctions show hysteretic current-voltage characteristics. © 2007 The American Physical Society.