Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures

Abstract

The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≠23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.