Effects of RF power on electrical and structural properties of sputtered SnO2:Sb thin films

Abstract

In this work, antimony doped tin oxide (SnO2:Sb) thin films were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The SnO2:Sb thin films were deposited for 1.0 h in a mixture of Ar and O2 environment with O2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of SnO2:Sb thin films was assessed using a field emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray difieaction. The average surface roughness (Ra) was measured with atomic force microscopy. The electrical resistivity of the deposited films was measured by the four-point-probe method. The thicknesses of the films were measured by surface profiler.