Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Abstract

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current-voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. All measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed. © IOP Publishing Ltd.