Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications

Abstract

Biocompatible and biodegradable resistive random-access memory devices using Mg/agarose/Al2O3/Mg-based organic/inorganic structures are reported, showing nonvolatile bipolar resistive switching memory behavior. The organic/inorganic-based hybrid active layer has large working windows (≈106) and is highly stable up to 200 continuous sweeps. The device can be also tuned into multilevel memory by varying the compliance current from a few microamperes to several milliamperes. The formation of metallic filaments inside the active layer during SET and RESET stages using an X-ray photoelectron spectroscopy depth profile and magnesium (Mg) metallic ions that penetrate the agarose layer is confirmed. For the bioresorbable test in both deionized water and phosphate-buffered saline solution, the erasing time of whole devices can be adjusted by using an ultrathin ALD-grown Al2O3 film.