Graphene growth on silicon carbide

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Abstract

With the aim of developing a single-crystal graphene substrate, which is indispensable for practical applications of graphene, we are experimentally and theoretically investigating the structural and physical properties of graphene grown on silicon carbide by thermal decomposition.

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Hibino, H., Kageshima, H., & Nagase, M. (2010). Graphene growth on silicon carbide. NTT Technical Review, 8(8). https://doi.org/10.53829/ntr201008sf4

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