Abstract
With the aim of developing a single-crystal graphene substrate, which is indispensable for practical applications of graphene, we are experimentally and theoretically investigating the structural and physical properties of graphene grown on silicon carbide by thermal decomposition.
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CITATION STYLE
APA
Hibino, H., Kageshima, H., & Nagase, M. (2010). Graphene growth on silicon carbide. NTT Technical Review, 8(8). https://doi.org/10.53829/ntr201008sf4
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