Effect of indium mole fraction on infrared light emitting diode (LED) device performance

Abstract

We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga 1-xIn xSb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x = 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.