Buried p -type layers in Mg-doped InN

Abstract

Variable magnetic field Hall effect, photoluminescence, and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p -type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. Early indications suggest the Mg acceptor level in InN may lie near 110 meV above the valence band maximum. The development of p -type doping techniques offers great promise for future InN based devices. © 2006 American Institute of Physics.