Telecommunication wavelength GaAsBi light emitting diodes

Abstract

GaAsBi light emitting diodes containing ~6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm-2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.