Abstract
Direct deposition of silver from fluoride-free alkaline solutions containing Ag(I) ions at pH higher than 12 onto silicon surfaces at room or elevated temperatures has been demonstrated. This deposition does not require a reducing agent, i.e. process proceeds via galvanic displacement reactions. This new process that is based on strong alkaline and fluoride-free solutions was experimentally illustrated through XRD and SEM analyses. Theoretically, it was confirmed that this process is thermodynamically favorable at room temperature, however for the real industrial applications elevated temperatures (up to 100 °C) are recommended.
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CITATION STYLE
Djokić, S. S., & Cadien, K. (2015). Galvanic deposition of silver on silicon surfaces from fluoride free aqueous solutions. ECS Electrochemistry Letters, 4(6), D11–D13. https://doi.org/10.1149/2.0051506eel
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