GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter wave detection in 220-330-GHz band

Abstract

We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8 μm2 mesa devices at room temperature. Measured current-voltage characteristics revealed a superior temperature stability of the devices compared with Schottky barrier diodes. The expected sensitivity variations over a temperature range from T=17 -300 K are 1.7 dB.