Formation and rupture of multiple conductive filaments in a Cu/TaOx/Pt device

Abstract

In a Cu/TaOx/Pt resistive device multiple Cu conductive nanofilaments can be formed and ruptured successively between the active Cu and inert Pt electrodes. The key parameters to repeatable multi-filaments switching cycles are the appropriate choice of compliance current window for individual nanofilament formation and the choice of bipolar and unipolar reset. Controlled formation and rupture of multiple filaments may enable multilevel storage capability in a single Conductive Bridge Random Access Memory cell if the repeatibility issue can be successfully addressed. © 2012 The Electrochemical Society.