Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

Abstract

The effects of oxygen-plasma treatment on solution-processed Al2Ox gate dielectrics for InGaZnOx (IGZO) thin film transistors (TFTs) are investigated in this paper. Thin films of amorphous Al2Ox are successfully fabricated by annealing temperature of 300 °C. Utilizing oxygen-plasma treated gate dielectrics, combustion-processed IGZO TFTs, which are annealed at a temperature of 300 °C, show a mobility of 7.3 cm2V-1s-1, a threshold voltage of -0.3 V, an on-off current ratio of 1 × 105, a subthreshold swing of 160 mV/decade, when operating with a voltage ranging from -2 V to +5 V. Our experimental results demonstrate that oxygen-plasma treatment can remarkably improve dielectric performance. This is presumably due to the passivation of interfacial and bulk traps, and the reduced concentration of oxygen vacancies.