A wideband inductorless single-to-differential LNA in 0.18 μ CMOS technology for digital TV receivers

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Abstract

This study presents an inverter-based inductorless single-to-differential (S2D) wideband low-noise amplifier (LNA). The proposed LNA has three inverter-based gain stages with a global shunt feedback resistor for wideband input impedance matching. Moreover, a shunt capacitor with a current bias transistor in the third gain stage enhances the gain/phase imbalances and the linearity of the pseudo-differential outputs. When implemented in a TSMC 0.18-μm CMOS process, this wideband LNA covering DC-1.4 GHz achieves a S 21 of 16.4 dB, a minimal input third-order intercept point (IIP3) of -13.3 dBm, and a minimal noise figure (with output buffers) of 3 dB. The output gain and phase imbalances are less than 1 dB and 2.5°, respectively, within 1 GHz. The chip consumes 12.8 mW from a 1.8 V supply. © 2001-2012 IEEE.

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Liu, J. Y. C., Chen, J. S., Hsia, C., Yin, P. Y., & Lu, C. W. (2014). A wideband inductorless single-to-differential LNA in 0.18 μ CMOS technology for digital TV receivers. IEEE Microwave and Wireless Components Letters, 24(7), 472–474. https://doi.org/10.1109/LMWC.2014.2316495

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