Abstract
We theoretically study the performance of terahertz quantum cascade lasers (THz-QCLs) with GaSb wells and InxGa1-xSb wells. The results of rate-equation calculations reveal that the intervalley scattering of electrons from the Γ valley to the L valley in GaSb degrades the performance of the GaSb-based THz-QCLs at high temperatures. We propose the use of InxGa1-xSb (x ≥ 0.25) quantum wells to reduce the intervalley scattering. Our calculations using the nonequilibrium Green's function method including alloy disorder scattering show that the THz-QCLs with InGaSb wells have higher gain than the GaAs-based THz-QCLs at high temperatures.
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CITATION STYLE
Yasuda, H. (2018). Intervalley scattering in terahertz quantum cascade lasers with GaSb and InGaSb wells. AIP Advances, 8(2). https://doi.org/10.1063/1.5023404
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