Strain in inhomogeneous InAs/GaAs quantum dot structures

Abstract

Most Non-destructive experimental approaches for the determination of indium concentration profiles give information about average indium concentration profiles only. Due to this, there is a need to extrapolate the indium concentration profiles in a way that takes into account the geometry of the quantum dots. We here present two extrapolation approaches. In the first approach we assume that the indium concentration profile is constant in the direction perpendicular to the measurement plane, while in the second approach we take into account the symmetry of the structure. Both approaches are compared to a profile with a constant indium concentration inside the dot.