Surface chemistry in atomic layer deposition of AlN thin films from Al(CH3)3 and NH3 studied by mass spectrometry

Abstract

Aluminum nitride (AlN) is a semiconductor with a very wide band gap and a potential dielectric material. Deposition of thin AlN films is routinely done by several techniques, including atomic layer deposition (ALD). In this study, we deposited AlN using ALD with trimethylaluminum (TMA) as the Al precursor and ammonia (NH3) with and without plasma activation as the N precursor in the temperature range from 100 to 400 °C while monitoring the surface reactions using mass spectrometry. Our results, combined with recent quantum chemical modelling, suggest that the surface chemistry of the deposition process is chemisorption of TMA followed by reductive elimination of the methyl groups to render mono methyl aluminum species. The NH3 chemisorption is done by ligand exchange to form CH4 and an -NH2 terminated surface.