Atomic-scale structure and chemistry of YIG/GGG

Abstract

Y3Fe5O12 (YIG) is a promising candidate for spin wave devices. In the thin film devices, the interface between YIG and substrate may play important roles in determining the device properties. Here, we use spherical aberration-corrected scanning electron microscopy and spectroscopy to study the atomic arrangement, chemistry and electronic structure of the YIG/Gd3Ga5O12 (GGG) interface. We find that the chemical bonding of the interface is FeO-GdGaO and the interface remains sharp in both atomic and electronic structures. We provide an efficient method to study the interface chemical bonding, and these results give necessary information for understanding the properties of interface and also for atomistic calculation.