Measuring the anisotropic permittivity tensor of DyScO3 to 110 GHz

Abstract

DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not yet been fully characterized at millimeter-wave frequencies. While there are methods to characterize anisotropic permittivity at millimeter-wave frequencies, there are very few methods those are suitable for the small lateral dimensions that DyScO3 can be grown in. To overcome this lack in the material characterization, we tested an on-wafer method based on coplanar waveguides to measure the full anisotropic permittivity tensor from 0.1 to 110 GHz. We characterized two orthogonal sets of coplanar waveguides fabricated on each of two substrates with (001) and (110) crystallographic orientations to resolve the full permittivity tensor. To validate our measurements, we compared our results to data from dc parallel plate capacitors and THz time-domain spectroscopy. Our measurements fill the need for measurements of the permittivity of DyScO3, while the methodology, more generally, enables quantitative characterization of anisotropic dielectrics.