Abstract
The ground-state energy level of an InAs quantum dot (QD) system can be changed from 1070 to 700 nm by changing the aluminum composition in the AlxGa1-xAs matrix. For all the QDs, the lattice-mismatched strains are the same as that of InAs/GaAs QDs, so that QDs are easily formed. Photoluminescence signals from the structures were strong at low temperature and stayed relatively high at room temperature. The results suggest that these highly strained QDs in the alloy matrices could be an excellent choice for the energy-level engineering of QDs. © 2000 American Institute of Physics.
Cite
CITATION STYLE
Kim, Y. S., Lee, U. H., Lee, D., Rhee, S. J., Leem, Y. A., Ko, H. S., … Woo, J. C. (2000). Energy-level engineering of self-assembled quantum dots by using AlGaAs alloy cladding layers. Journal of Applied Physics, 87(1), 241–244. https://doi.org/10.1063/1.371851
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
