High-Performance Bottom-Contact Organic Thin-Film Transistors by Improving the Lateral Contact

Abstract

One of the main challenges to achieve high-performance bottom-contact transistors involves the organic/electrodes contacts. This study provides a simple approach to address the contact issue by incorporating an inducing layer prior to the organic semiconductor deposition. The molecules of the inducing layer nucleate into lamellar grains from the edge to the channel, resulting in a good morphological contact to the bottom electrodes. The following active layer maintains nearly layer-by-layer growth mode and yields uniformed terraced-like films both on the electrode edges and in the channels. With the inducing layer, pentacene thin-film bottom-contact transistors are obtained with a hole mobility exceeding 1 cm2 V−1 s−1.