Abstract
We demonstrate the reversible current-induced motion of 180° antiferromagnetic domain walls in a CuMnAs device. By controlling the magnitude and direction of the current pulse, the position of a domain wall can be switched between three distinct pinning sites. The domain wall motion is attributed to a field-like spin-orbit torque that induces the same sense of rotation on each magnetic sublattice, owing to the crystal symmetry of CuMnAs. Domain wall motion is observed for current densities down to ≈ 2.5 × 1 0 10 A/m2 at room temperature.
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CITATION STYLE
Amin, O. J., Reimers, S., Maccherozzi, F., Dhesi, S. S., Novák, V., Campion, R. P., … Wadley, P. (2023). Electrical control of 180° domain walls in an antiferromagnet. APL Materials, 11(9). https://doi.org/10.1063/5.0156508
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