Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi

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Abstract

Half-Heusler alloys possess unique and desirable physical properties due to their thermoelectricity, magnetism, superconductivity, and weak antilocalization effects. These properties have become of particular interest since the recent discovery of topological Weyl semimetal state for which the electronic bands are dispersed linearly around one pair of Weyl nodes, with opposite chirality (i.e., chiral anomaly). Here, we report the transport signatures of topological electronic state in a half-Heusler GdPtBi single crystal. We show that the non-trivial π Berry phase, negative magnetoresistance and giant planner Hall effect arise from the chiral anomaly and that the Shubnikov-de Haas oscillation frequency in GdPtBi is angle-dependent with an anisotropic Fermi surface (FS). All transport signatures not only demonstrate the topological electronic state in half-Heusler GdPtBi crystals, but also describe the shape of the anisotropy FS.

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Zhang, J., Chen, J., Li, P., Zhang, C., Hou, Z., Wen, Y., … Zhang, X. (2020). Topological electronic state and anisotropic Fermi surface in half-Heusler GdPtBi. Journal of Physics Condensed Matter, 32(35). https://doi.org/10.1088/1361-648X/ab8ec8

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