Effects of carbon on ion-implantation-induced disorder in GaN

Abstract

Wurtzite GaN films bombarded with 40 keV C ions to high doses (5× 1017 and 1× 1018 cm-2) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (CN) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of 5-nm -large N2 gas bubbles. © 2007 American Institute of Physics.