Photoresponse properties of Aln-Β-Fe Si2 Schottky diodes using Β-Fe Si2 single crystals

Abstract

We have clearly observed photoresponse properties in an Aln-Β-Fe Si2 structure using Β-Fe Si2 single crystals grown by chemical vapor transport. A photocurrent is observed for photons with energies greater than 0.68 eV. It increases sharply with increasing photon energy and attains a maximum at approximately 0.95 eV (1.31 μm). The photocurrent originated from the photoexcited electrons in the Al and the band-to-band photoexcited carriers in the Β-Fe Si2 located under the Al contact. The photoresponsivity increased upon high-temperature annealing, reaching 58 mAW at 0.95 eV after annealing at 800 °C for 8 h. © 2007 American Institute of Physics.