Properties of In xGa 1-xN films in terahertz range

Abstract

In this letter, we report the characterization of the refractive indices and complex conductivities of a set of GaN films with different carrier concentrations, InN film, and In xGa 1-xN films with indium content varying from x 0.07 to x 0.14 grown by metalorganic chemical vapor deposition for frequencies ranging from 0.3 to 3 THz using terahertz time-domain spectroscopy (THz-TDS). The refractive indices of In xGa 1-xN films at THz range are reported. The carrier density and mobility determined using THz-TDS method show good agreement with four-probe Hall measurements. © 2012 American Institute of Physics.