MPTES decorated IDE for arsenic (AS) selective detection

Abstract

Heavy metals ions are ions which generally occupied most part water sources such river, sea and other water flow channels such as drainage, water pipe. The exist of the ions in drinking water traces have called the attention researchers due to the recent discovery of the ions problem in both human health and aquatic animal such as fish. Fish come and encounter heavy metals ions in the river and ingest it and subsequently this fish eaten by man. The ions will pass to human and attack some human orgains. Finding the reliable solution to detect traces of heavy metals ions in water is a promising approach to eliminate such problems. This research aim is to enhance detection of heavy sensors, for sensor technology industry using the fabricated MTES surface-modified silicon interdigitated electrode to detect arsenic ion in water, The device was fabricated using conventional photolithography process coupled with deep RIE etching. The fabricated devices was modified surface and characterized by Scanning Electron Microscopy, Atomic Force Microscopy and high-power microscopy. The electrical analysis by applying voltage to measure the device response to the surface modification step and subsequently against arsenic ion as it bonded to the device via MPTES, various MTES concentrations distinguished against the bare device and arsenic concentration. Based on current and voltage analysis, concentration-dependent results were obtained, the detection limit for surface modified IDE to the arsenic detection was 20 pM with the linear response behaviour to the concentration, Thus, with this wonderful detection limits, the devices high high-performance characteristic by selectively distinguish arsenic ions against other foreign elements in the water.