Abstract
A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.
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CITATION STYLE
Saito, Y., Fons, P., Bolotov, L., Miyata, N., Kolobov, A. V., & Tominaga, J. (2016). A two-step process for growth of highly oriented Sb2Te3 using sputtering. AIP Advances, 6(4). https://doi.org/10.1063/1.4948536
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