Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates

Abstract

Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O3 reaction at 50°C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm2 is achieved from SiH4 at 500°C. © 2013 The Electrochemical Society.