IR photodetector capabilities of p-NiO/n-ZnO heterojunction structure

Abstract

A p-NiO/n-ZnO bilayer thin film device was deposited by a simple, low temperature spray pyrolysis technique on the glass substrate at 250 OC. The deposited thin films are characterized by X-ray diffraction (XRD), and UV-Vis spectroscopy, which show a good crystalline nature of NiO thin film with the existence of interfacial defects sites. Further, p-NiO/n-ZnO bilayer thin film-based photodetector reveals promising IR detection induced due to the interfacial states. As a result, the heterojunction device exhibited high responsivity, photocurrent gain, and good reliability for IR illumination. Therefore, the heterojunction based p-NiO/n-ZnO photodetector showing promising results for IR detection.