Electrical and optical characteristics of InGaN/GaN Microdisk LEDs

Abstract

Two different InGaN/GaN multiple-quantum well (MQW) microdisk light emitting diodes (μ-LEDs) with different In compositions in the MQW were fabricated. The optical output power was greatly increased with a reduction of LED size. This can be attributed to the enhanced current density and internal quantum efficiency in μ-LEDs. The peak shift and the enhancement of output power were larger in μ-LED with a higher In composition in the MQW. These can be explained by a reduced piezoelectric field due to a partial strain relief and also more efficient carrier confinement due to a higher In composition in the MQWs. © 2005 The Electrochemical Society. rights reserved.