Wafer-scale GaN HEMT performance enhancement by diamond substrate integration

Abstract

A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN-based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high-thermal-conductivity substrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.