Improved bilayer phosphorene TFET inverter performance by reduction of ambipolarity

Abstract

A comprehensive study on the degradation of inverter output voltage based on double-gated (DG) bilayer Phosphorene complementary tunnel-FETs is presented. This degradation occurs for supply voltage (VDD) larger than the bandgap value of the channel material. Simulated load-lines of n-TFET and p-TFET confirm that this degradation happens due to the high ambipolarity of homojunction DG tunnel-FETs. But ambipolarity can be suppressed effectively in both homojunction n-TFET and p-TFET using dual-material gate (DMG) structure. It is shown that by appropriately choosing the gate materials of DMG TFET, improved voltage transfer characteristics (VTC) can be obtained for DMG TFET based inverter.