Magnetic proximity effect in two-dimensional van der Waals heterostructure

Abstract

The evolution of low-dimensional materials has frequently revolutionized new intriguing physical standards and suggests a unique approach to scientifically design a novel device. However, scaling down of spin-electronic devices entails in-depth knowledge and precise control on engineering interfacial structures, which unveils the exciting opportunity. To reveal exotic quantum phases, atomically thin two-dimensional van der Waals material, embraces control and tuning of various physical states by coupling with peripheral perturbation such as pressure, photon, gating, Moire pattern and proximity effect. Herein, we discuss the physical property of a pristine material which can be converted via proximity effects to attain intrinsic spin-dependent properties from its adjacent material like magnetic, topological or spin–orbit phenomena. Realizing magnetic proximity effect in atomically thin vdW heterostructure not only balance the traditional techniques of designing quality spin interface by doping, defects or surface modification, but also can overcome their restrictions for modelling and fabricate novel spin-related devices in nanoscale phases. The proximitized van der Waals heterostructure systems unveil properties, which cannot be realized in any integral component of considered heterostructure system. These proximitized van der Waals material provide an ideal platform for exploring new physical phenomena, which delivers a broader framework for employing novel materials and investigate nanoscale phases in spintronics and valleytronics.