Low programming current phase change memory cell with double GST thermally confined structure

Abstract

A novel PCM cell with double GST thermally confined structure was proposed and fabricated in this work. By inserting an extra bottom GST layer under the confined GST region, the heat loss can be effectively prevented and the temperature profile over active region becomes more uniform. Thus, a low RESET current less than 0.3 mA can be achieved and the SET performance is also improved to be faster than 200 ns. © 2007 IEEE.