Study on the Doping Effect of Cu-Doped ZnO Thin Films Deposited by Co-Sputering Technique

Abstract

Cu-doped ZnO thin films with variation power at 0, 3, 5, and 10 W were prepared by DC/RF magnetron sputtering technique. The thin films have been deposited onto the soda lime glass (SLG) substrates at room temperature. The XRD peaks of the Cu-doped ZnO thin films identified as hexagonal wurtzite structure ZnO. The surface morphology of Cu doped ZnO thin films was investigated through a scanning electron microscope, which indicated the grain size slightly decreased by doping Cu. The transmittance significantly decreases accompanying increasing the Cu concentration. The optical band gaps Cu-doped ZnO thin film were estimated to be 3.30, 3.25, 2.87, and 2.31 eV when the powers of Cu target were 0, 3, 5, and 10 W respectively. The 15% of the Cu content show the best data in our experiment.