Abstract
A photoconducting sampling gate which is triggered by a picosecond optical pulse and has an aperture of approximately 12 ps has been used to measure accurately the response of a high-speed, solid-state photodiode. The sample gate, which is made from a radiation-damaged semiconductor, is demonstrated to have better speed, lower noise level, negligible jitter, and fewer reflections than conventional sampling oscilloscopes. In addition, it can be used over a wide temperature range by direct mounting in a variable temperature cryostat.
Cite
CITATION STYLE
Auston, D. H., & Smith, P. R. (1982). Picosecond optical electronic sampling: Characterization of high-speed photodetectors. Applied Physics Letters, 41(7), 599–601. https://doi.org/10.1063/1.93612
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