Preparation and characterization of MOCVD thin films of cadmium sulphide

Abstract

A film of stoichiometric cadmium sulphide on quartz substrate was deposited by pyrolysis from bis-(morpholinodithioato-S,S') cadmium (C10H16N2O2S4Cd) (a single source precursor). The band gap of 2.4 eV was confirmed by optical absorption measurements. The stoichiometry and thickness were determined by Rutherford backscattering, and the absence of organic remmants in the film demonstrated by IR spectroscopy. © 1994.