Current transport modeling and experimental study of THz room temperature ballistic deflection transistors

Abstract

In this paper, two different theoretical models, Comsol Multiphysics (a Finite Element Analysis tool), and a field solver Atlas/Blaze from Silvaco, are compared qualitatively to study the effect of the deflector position, its size and electric field on the charge transport and its distribution along the channel, resulting in current outputs and leakages in ballistic deflection transistors (BDT). Silvaco simulations and experimental results were then used to study the lateral charge transport as a result of variation in electric field distribution, which controls the charge current along the channel in BDT. The electric field dependence of gain is also studied with experimental and theoretical results. © 2009 IOP Publishing Ltd.