InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 μm

Abstract

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/lnAsP/InAsSb/ InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K. © 2000 American Institute of Physics.